The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Sep. 13, 2006
Pedro Morrison, Austin, TX (US);
Kevin Soukup, Austin, TX (US);
David Cho, Austin, TX (US);
Karla Mendoza, Austin, TX (US);
Pedro Morrison, Austin, TX (US);
Kevin Soukup, Austin, TX (US);
David Cho, Austin, TX (US);
Karla Mendoza, Austin, TX (US);
Samsung Austin Semiconductor, L.P., Austin, TX (US);
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A system and method for selective imaging through dual photoresist layers. The system and method includes coating a surface of the wafer with a first resist and baking the wafer to sufficiently drive out solvents in the first resist. The first resist is exposed to a first radiation source and exposing an edge of the wafer having the first resist disposed thereon to the first radiation source. The method further includes hard baking the first resist to the wafer and coating the first resist with a second resist. The method also includes baking the wafer to sufficiently drive out solvents in the second resist and exposing the second resist to a second radiation source. The method also includes exposing select portions of the edge of the wafer having the second resist disposed thereon to the second radiation source and hard baking the second resist to the wafer.