The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 06, 2006
Han-ki Kim, Suwon-si, KR;
Myung-soo Huh, Suwon-si, KR;
Myoung-soo Kim, Suwon-si, KR;
Kyu-sung Lee, Suwon-si, KR;
Han-Ki Kim, Suwon-si, KR;
Myung-Soo Huh, Suwon-si, KR;
Myoung-Soo Kim, Suwon-si, KR;
Kyu-Sung Lee, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin-si, KR;
Abstract
Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.