The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8379414 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 19, 2013

Filed:

Feb. 05, 2010
Applicants:

Chih-feng Huang, Chupei, TW;

Kuang-ming Chang, Jhongli, TW;

Inventors:

Chih-Feng Huang, Chupei, TW;

Kuang-Ming Chang, Jhongli, TW;

Assignee:

Richtek Technology Corp., Chupei, unknown;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01);
U.S. Cl.
CPC ...
Abstract

A power transistor chip with built-in enhancement mode metal oxide semiconductor field effect transistor and application circuit thereof provides an enhancement mode metal oxide semiconductor field effect transistor in association with two series connected resistors to act as a start-up circuit for the AC/DC voltage converter. The start-up circuit can be shut off after the pulse width modulation circuit of the AC/DC voltage converter circuit works normally and still capable of offering a function of brown out detection for the pulse width modulation circuit as well. Besides, the enhancement mode metal oxide semiconductor field effect transistor is built in the power transistor chip without additional masks and processes during the power transistor chip being fabricated such that the entire manufacturing process is simplified substantively with the economical production cost.


Find Patent Forward Citations

Huang, Chih-Feng. (2013). Power transistor chip with built-in enhancement mode metal oxide semiconductor field effect transistor and application circuit thereof (U.S. Patent No. 8379414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8379414

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