The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jun. 30, 2010
Hironobu Matsuzawa, Tokyo, JP;
Yoshihiro Tsuchiya, Tokyo, JP;
Hironobu Matsuzawa, Tokyo, JP;
Yoshihiro Tsuchiya, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and second ferromagnetic layers. The spacer layer includes a nonmagnetic metal layer, a first oxide semiconductor layer, and a second oxide semiconductor layer that are stacked in this order. The nonmagnetic metal layer is made of Cu, and has a thickness in the range of 0.3 to 1.5 nm. The first oxide semiconductor layer is made of a Ga oxide semiconductor, and has a thickness in the range of 0.5 to 2.0 nm. The second oxide semiconductor layer is made of a Zn oxide semiconductor, and has a thickness in the range of 0.1 to 1.0 nm.