The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jul. 01, 2010
Natalya Naumenko, Moscow, RU;
Benjamin P. Abbott, Maitland, FL (US);
Natalya Naumenko, Moscow, RU;
Benjamin P. Abbott, Maitland, FL (US);
Triquint Semiconductor, Inc., Hillsboro, OR (US);
Abstract
A SAW resonator with improved temperature characteristics includes a single crystal piezoelectric substrate of symmetry 3 m, providing propagation of leaky waves with quasi-shear horizontal polarization and squared electromechanical coupling coefficient exceeding 5%. A SiOoverlay having a flattened surface covers the electrode pattern. Electrode thicknesses range from about 0.1% to about 10% of an acoustic wavelength and the SiOthickness ranges between zero and 30% of an acoustic wavelength of a surface acoustic wave excited on the surface of the substrate. The piezoelectric substrate has an orientation defined by Euler angles (0±3°, μ, 0±3°), with angle μ=90°−μ' and rotation angle μ′, which depends on material of a piezoelectric substrate and thicknesses of electrodes and SiOoverlay. Such orientations simultaneously combined with optimized thicknesses of electrodes and SiOoverlay provide for improved performance in RF applications with improved temperature characteristics.