The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Sep. 23, 2011
Applicant:
Martin Domeij, Sollentuna, SE;
Inventor:
Martin Domeij, Sollentuna, SE;
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present disclosure relates to a silicon carbide (SiC) bipolar junction transistor (BJT), where the surface region between the emitter and base contacts () on the transistor is given a negative electric surface potential with respect to the potential in the bulk SiC. The present disclosure also relates to a method for increasing the current gain in a silicon carbide (SiC) bipolar junction transistor (BJT) by the reduction of the surface recombination at the SiC surface between the emitter and base contacts () of the transistor.