The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jul. 15, 2010
Shinichi Tamari, Kagoshima, JP;
Mitsuhiro Nakamura, Kagoshima, JP;
Koji Wakizono, Kagoshima, JP;
Tomoya Nishida, Kagoshima, JP;
Yuji Ibusuki, Kanagawa, JP;
Shinichi Tamari, Kagoshima, JP;
Mitsuhiro Nakamura, Kagoshima, JP;
Koji Wakizono, Kagoshima, JP;
Tomoya Nishida, Kagoshima, JP;
Yuji Ibusuki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a compound semiconductor substrate; an n-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a first channel layer; an n-type first barrier layer that forms a heterojunction with the first channel layer, and supplies an n-type charge to the first channel layer; and a p-type gate region that has a pn junction-type potential barrier against the n-type first barrier layer; and a p-channel field-effect transistor region formed on the compound semiconductor substrate, and that includes a p-type second channel layer, and an n-type gate region that has a pn junction-type potential barrier against the p-type second channel layer.