The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Sep. 24, 2010
Tan Sakong, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Ho Sun Paek, Gyunggi-do, KR;
Suk Ho Yoon, Seoul, KR;
Jeong Wook Lee, Gyunggi-do, KR;
Tan Sakong, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Ho Sun Paek, Gyunggi-do, KR;
Suk Ho Yoon, Seoul, KR;
Jeong Wook Lee, Gyunggi-do, KR;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlInGaN, where 0<x<1, 0<y<1, and 0<x+y<1; a second barrier layer having an energy band higher than an energy band of the first barrier layer and including one of InGaN, where 0<x<0.2, and GaN; a well layer including InGaN, where 0<x<1; a third barrier layer including one of InGaN, where 0<x<0.2 and GaN; and a lattice mismatch relaxation layer including one of AlInGaN, where 0<x<1, 0<y<1, and 0<x+y<1, AlGaN, where 0<x<1, and GaN, the lattice mismatch relaxation layer having a lattice constant greater than a lattice constant of the well layer and smaller than a lattice constant of the p-type GaN-based semiconductor layer.