The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jan. 08, 2009
Yuichi Saito, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Akihiko Kohno, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor deviceincludes: a substrate; an active layerprovided on the substrateand including a channel region, and a first regionand a second regionthat are respectively located on opposite sides of the channel region; first and second contact layersandrespectively in contact with the first and second regionsandof the active layer; a first electrodeelectrically coupled to the first regionvia the first contact layer; a second electrodeelectrically coupled to the second regionvia the second contact layer; and a gate electrodeprovided such that a gate insulating layeris interposed between the gate electrodeand the active layer, the gate electrodebeing configured to control a conductivity of the channel region. The active layercontains silicon. The semiconductor device further includes an oxygen-containing silicon layerbetween the active layerand the first and second contact layers. The layercontains oxygen at a concentration higher than the active layerand the first and second contact layers