The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Mar. 23, 2010
Applicants:
Tae-sang Kim, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyoung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Kwang-hee Lee, Suwon-si, KR;
Inventors:
Tae-sang Kim, Seoul, KR;
Sang-yoon Lee, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyoung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Kwang-hee Lee, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.