The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Feb. 22, 2008
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Chieh-fang Chen, Panchiao, TW;
Yi-chou Chen, HsinChu, TW;
Chung H. Lam, Peekskill, NY (US);
Simone Raoux, Santa Clara, CA (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Chieh-Fang Chen, Panchiao, TW;
Yi-Chou Chen, HsinChu, TW;
Chung H. Lam, Peekskill, NY (US);
Simone Raoux, Santa Clara, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A phase change memory cell with a single element phase change thin film layer; and a first electrode and a second electrode coupled to the single element phase change thin film layer. A current flows from the first electrode to the single element phase change thin film layer, and through to the second electrode. The single element phase change thin film layer includes a single element phase change material. The single element phase change thin film layer can be less than 5 nanometers thick. The temperature of crystallization of the single element phase change material can be controlled by its thickness. In one embodiment, the single element phase change thin film layer is configured to be amorphous at room temperature (25 degrees Celsius). In one embodiment, the single element phase change thin film layer is comprised of Antimony (Sb).