The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Mar. 02, 2009
Applicants:
Kazutoyo Takano, Tokyo, JP;
Junichi Murakami, Fukuoka, JP;
Tadaharu Minato, Tokyo, JP;
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device includes the steps of forming a P-type region on a surface of a semiconductor substrate, forming at least one Al electrode on the P-type region, forming an interlayer film in contact with the at least one Al electrode, the interlayer film being of a material which is less reactive with Si than is Al, and forming a semi-insulating film on the interlayer film, the semi-insulating film containing Si.