The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Feb. 09, 2011
Applicants:
Masayoshi Tagami, Kawasaki, JP;
Fuminori Ito, Kawasaki, JP;
Inventors:
Masayoshi Tagami, Kawasaki, JP;
Fuminori Ito, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Kawasaki-Shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device includes forming a trench on a porous insulating film, placing a chemical material including a structure comprising —Si—O— including vinyl group on a surface of the porous insulating film or in the porous insulating film, and performing polymerization of the chemical material to provide a dielectric film having a density higher than that of porous insulating film on the surface of the trench. The structure may be a structure defined by a formula 1.