The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Feb. 24, 2010
Applicants:
Masatsugu Kohira, Osaka, JP;
Yasushi Funakoshi, Osaka, JP;
Inventors:
Masatsugu Kohira, Osaka, JP;
Yasushi Funakoshi, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a method of fabricating a semiconductor device, including the steps of forming a diffusion preventing mask on a surface of a semiconductor substrate, applying a dopant diffusing agent containing a dopant of a first conductivity type or a second conductivity type onto the surface of the semiconductor substrate at a spacing from the diffusion preventing mask, and forming a dopant diffusion layer by diffusing the dopant from the dopant diffusing agent into the semiconductor substrate.