The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Mar. 23, 2011
Ed Lindow, Scottsdale, AZ (US);
Chantal Arena, Mesa, AZ (US);
Ronald Bertram, Mesa, AZ (US);
Ranjan Datta, Bangalore, IN;
Subhash Mahajan, Tempe, AZ (US);
Ed Lindow, Scottsdale, AZ (US);
Chantal Arena, Mesa, AZ (US);
Ronald Bertram, Mesa, AZ (US);
Ranjan Datta, Bangalore, IN;
Subhash Mahajan, Tempe, AZ (US);
Soitec, Bernin, FR;
Abstract
Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to fabricate semiconductor structures of III-V materials, such as InGaN. A semiconductor layer is fabricated by growing sublayers using differing sets of growth conditions to improve the homogeneity of the resulting layer, to improve a surface roughness of the resulting layer, and/or to enable the layer to be grown to an increased thickness without the onset of strain relaxation.