The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2013

Filed:

Jan. 27, 2011
Applicants:

Narasimhulu Kanike, Wayne, NJ (US);

Mark R. Visokay, Wappingers Falls, NY (US);

Oh-jung Kwon, Hopewell Junction, NY (US);

Inventors:

Narasimhulu Kanike, Wayne, NJ (US);

Mark R. Visokay, Wappingers Falls, NY (US);

Oh-Jung Kwon, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method includes providing a substrate having insulating layers thereon; forming a first trench in a first region of the substrate and a second trench in a second region of the substrate; thermally growing layers of oxide along the sides of the trenches; filling the first trench and the second trench with a polysilicon material, planarizing the polysilicon material, and creating a shallow trench isolation between the first region and the second region, wherein the step f) of creating the shallow trench isolation is performed only after the steps of d) filling and e) planarizing.


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