The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Nov. 15, 2010
Wibo Van Noort, Westbrook, ME (US);
Jamal Ramdani, Scarborough, ME (US);
Andre Labonte, Scarborough, ME (US);
Donald Robertson Getchell, York, ME (US);
Wibo Van Noort, Westbrook, ME (US);
Jamal Ramdani, Scarborough, ME (US);
Andre Labonte, Scarborough, ME (US);
Donald Robertson Getchell, York, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A SiGe heterojunction bipolar transistor is fabricated by etching an epitaxially-formed structure to form a mesa that has a collector region, a cap region, and a notched SiGe base region that lies in between. A protective plug is formed in the notch of the SiGe base region so that thick non-conductive regions can be formed on the sides of the collector region and the cap region. Once the non-conductive regions have been formed, the protective plug is removed. An extrinsic base is then formed to lie in the notch and touch the base region, followed by the formation of isolation regions and an emitter region.