Poly resistor and metal gate fabrication and structure

Abstract

A method is provided for fabricating a microelectronic device and a resistor on a substrate. The method can include forming device regions in a monocrystalline semiconductor region of a substrate, in which the device regions have edges defined according to a first semiconductor feature overlying a major surface of the semiconductor region. A dielectric region is formed having a planarized surface overlying the semiconductor region and overlying a second semiconductor feature disposed above a surface of an isolation region in the substrate. The surface of the isolation region can be disposed below the major surface. The method can further include removing at least a portion of the first semiconductor feature exposed at the planarized surface of the dielectric region to form an opening and forming a gate at least partially within the opening. Thereafter, further processing can include forming electrically conductive contacts extending through apertures in the dielectric region to the second semiconductor feature and the device regions, respectively. The step of forming electrically conductive contacts may include forming silicide regions contacting portions of the second semiconductor feature and the device regions, respectively. In such way, the method can define a resistor having a current path through the second semiconductor feature, and a microelectronic device including the gate and the device regions.