The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Dec. 28, 2011
Wu-hsiung Lin, Hsinchu, TW;
Ming-wei Sun, Hsinchu County, TW;
Wu-Hsiung Lin, Hsinchu, TW;
Ming-Wei Sun, Hsinchu County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A TFT including a gate, a gate insulation layer, an oxide semiconductor layer, a translucent layer, a source, and a drain. The gate insulation layer covers the gate. The oxide semiconductor layer is disposed on the gate insulation layer and located above the gate. The oxide semiconductor layer includes an oxide channel layer and two ohmic contact layers. The ohmic contact layers are respectively located beside the oxide channel layer and connected with the oxide channel layer. The translucent layer is located above the oxide channel layer. The source and the drain are disposed on the gate insulation layer and the ohmic contact layers. The source and the drain are electrically insulated from each other.