The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Jul. 27, 2010
Applicants:
Tetsufumi Kawamura, Kodaira, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Hironori Wakana, Tokorozawa, JP;
Mutsuko Hatano, Kokubunji, JP;
Inventors:
Tetsufumi Kawamura, Kodaira, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Hironori Wakana, Tokorozawa, JP;
Mutsuko Hatano, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/16 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.