The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Dec. 31, 2007
Applicants:
Joo-soo Lim, Gumi-si, KR;
Hong-sik Kim, Seoul, KR;
Hee-young Kwack, Seoul, KR;
Hyun-seok Hong, Goyang-si, KR;
Byung-chul Ahn, Seoul, KR;
Byoung-ho Lim, Gumi-Si, KR;
Inventors:
Joo-Soo Lim, Gumi-si, KR;
Hong-Sik Kim, Seoul, KR;
Hee-Young Kwack, Seoul, KR;
Hyun-Seok Hong, Goyang-si, KR;
Byung-Chul Ahn, Seoul, KR;
Byoung-Ho Lim, Gumi-Si, KR;
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming an inorganic insulating layer on a substrate comprises supplying a mixed gas between the substrate and a target, and generating a plasma between the substrate and the target. The target comprises a silicon-based material. The method further comprises depositing a plurality of ions from the plasma on the substrate.