The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Oct. 26, 2009
Bo-yun Jang, Daejeon-si, KR;
Chang-hyun Ko, Daejeon-si, KR;
Jeong-chul Lee, Daejeon-si, KR;
Joon-soo Kim, Daejeon-si, KR;
Joo-seok Park, Daejeon-si, KR;
Bo-Yun Jang, Daejeon-si, KR;
Chang-Hyun Ko, Daejeon-si, KR;
Jeong-Chul Lee, Daejeon-si, KR;
Joon-Soo Kim, Daejeon-si, KR;
Joo-Seok Park, Daejeon-si, KR;
Korea Institute of Energy Research, Daejeon-Si, KR;
Abstract
The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.