The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Mar. 05, 2010
Yang-han Lee, Taoyuan County, TW;
Chun Chang, Taipei, TW;
Yang-Han Lee, Taoyuan County, TW;
Chun Chang, Taipei, TW;
Princeton Technology Corporation, Hsin Tien, Taipei County, TW;
Abstract
An electrostatic discharge (ESD) protection circuit having first and second transistors and an ESD clamp circuit. The first and second transistors are coupled in series between first and second voltage input pins of a chip. The ESD clamp circuit is coupled between the first and second voltage input pins. The drains of the first and second transistors are coupled to an I/O pin of the chip. The doping regions of the first and second transistors are of distinct doping concentrations. The first transistor comprises four doping regions, and has a source formed by the first and third doping regions, and has a drain formed by the second and the fourth doping regions. The first doping region is within the third doping region. The second doping region is within the fourth doping region. The doping concentration of the fourth doping region is less than that of the third doping concentration.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile