The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Jan. 12, 2011
Applicants:

Santiago Iriarte Garcia, Valencia, ES;

Johannes Gerber, Unterschleissheim, DE;

Bernhard Wolfgang Ruck, Freising, DE;

Inventors:

Santiago Iriarte Garcia, Valencia, ES;

Johannes Gerber, Unterschleissheim, DE;

Bernhard Wolfgang Ruck, Freising, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03L 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit provides a power on reset signal with respect to a supply voltage level supplying the electronic device. The integrated circuit comprises a bias current generating stage having a first current mirror and an output stage having first, second and third series connected MOS transistors. A connection between the second MOS transistor and the third MOS transistor forms a POR output node. A gate of the second MOS transistor and a gate of the third MOS transistor are coupled to each other and to the first current mirror. This allows a current through the third MOS transistor when the supply voltage is higher than a first MOS transistor threshold and a current through the second MOS transistor only when the supply voltage is greater than or equal to the sum of the first MOS transistor threshold and a second MOS transistor threshold voltage.


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