The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Oct. 20, 2009
Applicants:

Chi Kang Liu, Shanghai, CN;

Talee Yu, Shanghai, CN;

Inventors:

Chi Kang Liu, Shanghai, CN;

Talee Yu, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit device comprising an improved bonding pad structure. The device has a semiconductor substrate. A plurality of active MOS devices are formed on the semiconductor substrate. The device has an interlayer dielectric layer overlying the plurality of active MOS devices and at least one single metal bonding pad formed on the interlayer dielectric layer and directly over at least one of the active devices. At least four edge regions are formed on a square shape of the at least one single metal bonding pad. An angled cut region is formed on each of the four edge regions. The device has a buffer metal layer free region located between the plurality of active MOS devices and the at least one single metal bonding pad. The buffer metal layer free region does not have a buffer metal layer in the interlayer dielectric layer.


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