The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Sep. 03, 2010
Applicants:
Han-chung Tai, Kaohsiung, TW;
Hsin-chih Chiang, Hsinchu, TW;
Inventors:
Han-Chung Tai, Kaohsiung, TW;
Hsin-Chih Chiang, Hsinchu, TW;
Assignee:
System General Corp., Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor structure. The semiconductor comprises a substrate, a first deep well, a diode and a transistor. The first deep well is formed in the substrate. The diode is formed in the first deep well. The transistor is formed in the first deep well. The diode is connected to a first voltage, the transistor is connected to a second voltage, and the diode and the transistor are cascaded.