The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Feb. 17, 2011
Wataru Saito, Kanagawa-ken, JP;
Syotaro Uno, Kanagawa-ken, JP;
Munehisa Yabuzaki, Hyogo-ken, JP;
Shunji Taniuchi, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Uno, Kanagawa-ken, JP;
Munehisa Yabuzaki, Hyogo-ken, JP;
Shunji Taniuchi, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a first main electrode, a third semiconductor region of a second conductivity type, a second main electrode, and a plurality of embedded semiconductor regions of the second conductivity type. The second semiconductor region is formed on a first major surface of the first semiconductor region. The first main electrode is formed on a face side opposite to the first major surface of the first semiconductor region. The third semiconductor region is formed on a second major surface of the second semiconductor region on a side opposite to the first semiconductor region. The second main electrode is formed to bond to the third semiconductor region. The embedded semiconductor regions are provided in a termination region. A distance between the embedded semiconductor region and the second major surface along a direction from the second major surface toward the first major surface becomes longer toward outside from the device region.