The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jul. 07, 2009
Applicants:
Sung-ho Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Sang-wook Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Inventors:
Sung-ho Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Sang-wook Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.