The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jun. 12, 2007
Erwin Hijzen, Blanden, BE;
Joost Melai, Enschede, NL;
Wibo Van Noort, Wappingers Falls, NY (US);
Johannes Donkers, Valkenswaard, NL;
Philippe Meunier-beillard, Kortenberg, BE;
Andreas M. Piontek, Leuven, BE;
LI Jen Choi, Mountain View, CA (US);
Stefaan Van Huylenbroeck, Kessel-Lo, BE;
Erwin Hijzen, Blanden, BE;
Joost Melai, Enschede, NL;
Wibo Van Noort, Wappingers Falls, NY (US);
Johannes Donkers, Valkenswaard, NL;
Philippe Meunier-Beillard, Kortenberg, BE;
Andreas M. Piontek, Leuven, BE;
Li Jen Choi, Mountain View, CA (US);
Stefaan Van Huylenbroeck, Kessel-Lo, BE;
NXP, B.V., Eindhoven, NL;
Interuniversitair Microelektronica Centrum VZW, Leuven, BE;
Abstract
The invention relates to a semiconductor device () with a substrate () and a semiconductor body () comprising a bipolar transistor with in that order a collector region (), a base region (), and an emitter region (), wherein the semiconductor body comprises a projecting mesa () comprising at least a portion of the collector region () and the base region (), which mesa is surrounded by an isolation region (). According to the invention, the semiconductor device () also comprises a field effect transistor with a source region, a drain region, an interposed channel region, a superimposed gate dielectric (), and a gate region (), which gate region () forms a highest part of the field effect transistor, and the height of the mesa () is greater than the height of the gate region (). This device can be manufactured inexpensively and easily by a method according to the invention, and the bipolar transistor can have excellent high-frequency characteristics.