The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Oct. 06, 2011
Applicants:
Weidong Tian, Dallas, TX (US);
Imran Khan, Richardson, TX (US);
Inventors:
Weidong Tian, Dallas, TX (US);
Imran Khan, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/92 (2006.01);
U.S. Cl.
CPC ...
Abstract
A zero temperature coefficient (ZTC) capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×10atoms/cmand 2.3×10atoms/cm. An integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×10atoms/cmand 2.3×10atoms/cm. A process of forming an integrated circuit containing a ZTC capacitor including a silicon dioxide dielectric layer with a phosphorus density between 1.7×10atoms/cmand 2.3×10atoms/cm.