The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8373184 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 12, 2013

Filed:

May. 10, 2006
Applicants:

Hyo Won Suh, Chunlanam-do, KR;

Jin Young Hong, Seoul, KR;

Inventors:

Hyo Won Suh, Chunlanam-do, KR;

Jin Young Hong, Seoul, KR;

Assignee:

Samsung Electronics Co. Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention provides a nitride semiconductor light emitting device. In the invention, a first conductivity-type nitride semiconductor layer is formed on a conductive substrate having light transmissibility. An active layer is formed on the first conductivity-type nitride semiconductor layer. Also, a second conductivity-type nitride semiconductor layer is formed on the active layer. Further, a conductive light scattering layer made of a conductive material is formed on an underside of the substrate. The conductive light scattering layer has light transmissibility of 70% or more and has a rough pattern formed on an outer surface to scatter light.


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Suh, Hyo. (2013). Vertical nitride based semiconductor light emitting device having improved light extraction efficiency (U.S. Patent No. 8373184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8373184

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