The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jan. 09, 2012
DO Hwan Kim, Seoul, KR;
Hyun Sik Moon, Seoul, KR;
Byung Wook Yoo, Yongin-si, KR;
Sang Yoon Lee, Seoul, KR;
Bang Lin Lee, Suwon-si, KR;
Jeong IL Park, Seongnam-si, KR;
Eun Jeong Jeong, Seongnam-si, KR;
Do Hwan Kim, Seoul, KR;
Hyun Sik Moon, Seoul, KR;
Byung Wook Yoo, Yongin-si, KR;
Sang Yoon Lee, Seoul, KR;
Bang Lin Lee, Suwon-si, KR;
Jeong Il Park, Seongnam-si, KR;
Eun Jeong Jeong, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.