The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Dec. 20, 2007
Applicants:

Jaeyoung Choi, Suwon-si, KR;

Hyeon Jin Shin, Suwon-si, KR;

Seonmi Yoon, Yongin-si, KR;

Seong Jae Choi, Seoul, KR;

Inventors:

Jaeyoung Choi, Suwon-si, KR;

Hyeon Jin Shin, Suwon-si, KR;

Seonmi Yoon, Yongin-si, KR;

Seong Jae Choi, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a carbon nano-tube (CNT) light emitting device and a method of manufacturing the same. Specifically, the CNT light emitting device comprises: a CNT thin film formed using a CNT dispersed solution; a n-doping polymer formed on one end of the CNT thin film; a p-doping polymer formed on the other end of the CNT thin film; and a light emitting part between the n-doping polymer and the p-doping polymer. In addition, the method of manufacturing a CNT light emitting device comprises steps of: mixing CNTs with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; forming a CNT thin film using the CNT dispersed solution; coating a n-doping polymer on one end of the CNT thin film; and coating a p-doping polymer on the other end of the CNT thin film. According to the invention, the n-doping polymer and the p-doping polymer are respectively coated on the CNT having a CNT random network structure to implement a p-n junction, thereby implementing a light emitting device in a simple and low-priced process.


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