The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Aug. 03, 2009
Toshihiro Okamura, Shibuya, JP;
Mitsuhiro Nagashima, Suginami, JP;
Michiya Kibe, Sagamihara, JP;
Hironori Nishino, Kawasaki, JP;
Yasuhito Uchiyama, Kawasaki, JP;
Yusuke Matsukura, Kawasaki, JP;
Toshihiro Okamura, Shibuya, JP;
Mitsuhiro Nagashima, Suginami, JP;
Michiya Kibe, Sagamihara, JP;
Hironori Nishino, Kawasaki, JP;
Yasuhito Uchiyama, Kawasaki, JP;
Yusuke Matsukura, Kawasaki, JP;
Technical Research & Development Institute Ministry of Defense of Japan, Tokyo, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.