The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jun. 28, 2010
Applicants:
Kwan-woo DO, Gyeonggi-do, KR;
Kee-jeung Lee, Gyeonggi-do, KR;
Kyung-woong Park, Gyeonggi-do, KR;
Jeong-yeop Lee, Gyeonggi-do, KR;
Inventors:
Kwan-Woo Do, Gyeonggi-do, KR;
Kee-Jeung Lee, Gyeonggi-do, KR;
Kyung-Woong Park, Gyeonggi-do, KR;
Jeong-Yeop Lee, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer.