The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Aug. 31, 2010
Jae-woo Chung, Yongin-si, KR;
Seung-ho Lee, Suwon-si, KR;
Young-ki Hong, Anyang-si, KR;
Sung-gyu Kang, Suwon-si, KR;
Joong-hyuk Kim, Seoul, KR;
Jae-woo Chung, Yongin-si, KR;
Seung-ho Lee, Suwon-si, KR;
Young-ki Hong, Anyang-si, KR;
Sung-gyu Kang, Suwon-si, KR;
Joong-hyuk Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A method of manufacturing a thin film transistor includes sequentially forming a gate and at least one insulation layer on a substrate, forming a source electrode and a drain electrode on the at least one insulation layer, and forming a channel layer formed of a semiconductor on a part of the source electrode and the drain electrode, wherein the gate, the source electrode, and the drain electrode are formed by using a hybrid inkjet printing apparatus.