The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Feb. 16, 2011
Aiguo Feng, Fremont, CA (US);
Aiguo Feng, Fremont, CA (US);
Ahbee1, LP, San Jose, CA (US);
Abstract
A method for forming multiple layers in a single process chamber includes placing a substrate in the process chamber having multiple processing sources and iteratively forming a copper indium gallium selenium (CIGS) including forming multiple relatively thin CIGS layers including forming a copper indium gallium (CIG) layer on the substrate, the CIG layer having a thickness of between less than about 50 angstroms and about 200 angstroms, forming a selenium layer on the CIG layer, the selenium layer having a thickness of between less than about 50 angstroms and about 200 angstroms and heating the substrate, the CIG layer and the selenium layer. A processing chamber system is also disclosed.