The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 12, 2013

Filed:

Mar. 05, 2007
Applicants:

Jun Yamada, Ibaraki, JP;

Yuya Hirao, Ritto, JP;

Naoki Masazumi, Kobe, JP;

Inventors:

Jun Yamada, Ibaraki, JP;

Yuya Hirao, Ritto, JP;

Naoki Masazumi, Kobe, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing an organic thin film transistor having, on a substrate, a source electrode, a gate electrode, a drain electrode, an insulating layer and an organic semiconductor layer. The method has a step of forming the source electrode and the drain electrode such that one of the source electrode and the drain electrode which is an inner-located electrode has an outer circumference which is circular or polygonal and that the other electrode which is an outer-located electrode has an inner circumference facing the outer circumference of the inner-located electrode, the inner circumference being of a shape which is substantially concentric with the outer circumference of the inner-located electrode. The method also has a step of forming the organic semiconductor layer for connecting the source electrode and the drain electrode to each other by a process of dropping an organic semiconductor material.


Find Patent Forward Citations

Loading…