The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Sep. 12, 2008
Hyun Soo Kim, Gyunggi-do, KR;
Joon Seop Kwak, Jeollanam-do, KR;
Ki Man Kang, Jeollanam-do, KR;
Jin Hyun Lee, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Hyun Soo Kim, Gyunggi-do, KR;
Joon Seop Kwak, Jeollanam-do, KR;
Ki Man Kang, Jeollanam-do, KR;
Jin Hyun Lee, Gyunggi-do, KR;
Yu Seung Kim, Gyunggi-do, KR;
Cheol Soo Sone, Gyunggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.