The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jun. 02, 2010
Hsin-hui Hsu, Hsin-Chu, TW;
Chuan-wei Wang, Hsin-Chu, TW;
Sheng-ta Lee, Hsin-Chu, TW;
Chih-hung LU, Hsin-Chu, TW;
Hsin-Hui Hsu, Hsin-Chu, TW;
Chuan-Wei Wang, Hsin-Chu, TW;
Sheng-Ta Lee, Hsin-Chu, TW;
Chih-Hung Lu, Hsin-Chu, TW;
Pixart Imaging Inc., Hsin-Chu, TW;
Abstract
The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.