The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2013
Filed:
Jun. 04, 2009
Akio Kawabata, Kawasaki, JP;
Mizuhisa Nihei, Kawasaki, JP;
Daiyu Kondo, Kawasaki, JP;
Shintaro Sato, Kawasaki, JP;
Akio Kawabata, Kawasaki, JP;
Mizuhisa Nihei, Kawasaki, JP;
Daiyu Kondo, Kawasaki, JP;
Shintaro Sato, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
After forming an opening, a resist film is formed on the entire surface and a resist pattern is formed by patterning the resist film. The shape of the resist pattern is such that it covers one side of the bottom of the opening. As a result, a Si substrate is exposed only in one part of the opening. Then, using the resist pattern as a mask, a catalytic layer is formed on the bottom of the opening. Then, the resist pattern is removed. Carbon nanotubes are grown on the catalytic layer. At this time, since the catalytic layer is formed on only one side of the bottom of the opening, the Van der Waals force biased towards that side works horizontally on the growing carbon nanotubes. Therefore, the carbon nanotubes are attracted towards the nearest side of the SiOfilm and grow biased towards that side.