Mesa semiconductor device and method of manufacturing the same

Abstract

The invention provides a mesa semiconductor device and a method of manufacturing the same which enhance the yield and productivity. An N− type semiconductor layer is formed on a front surface of a semiconductor substrate, and a P type semiconductor layer is formed thereon. An anode electrode is further formed on the P type semiconductor layer so as to be connected to the P type semiconductor layer, and a mesa groove is formed from the front surface of the P type semiconductor layer deeper than the N− type semiconductor layer so as to surround the anode electrode. Then, a second insulation film is formed from inside the mesa groove onto the P type semiconductor layer on the outside of the mesa groove. The second insulation film is made of an organic insulator such as polyimide type resin or the like. The lamination body made of the semiconductor substrate and the layers laminated thereon is then diced along a scribe line.