The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8368176 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 05, 2013

Filed:

Jun. 09, 2011
Applicants:

Takayuki Iwaki, Kanagawa, JP;

Takamasa Itou, Kanagawa, JP;

Kana Shimizu, Kanagawa, JP;

Inventors:

Takayuki Iwaki, Kanagawa, JP;

Takamasa Itou, Kanagawa, JP;

Kana Shimizu, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.


Find Patent Forward Citations

Iwaki, Takayuki. (2013). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 8368176). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8368176

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