The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Jun. 03, 2011
Claire Fenouillet-béranger, Saint Martin d'Hères, FR;
Olivier Thomas, Revel, FR;
Philippe Coronel, Barraux, FR;
Stéphane Denorme, Crolles, FR;
Claire Fenouillet-Béranger, Saint Martin d'Hères, FR;
Olivier Thomas, Revel, FR;
Philippe Coronel, Barraux, FR;
Stéphane Denorme, Crolles, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
An etching mask, comprising the delineation pattern of the gate electrode, of a source contact, a drain contact and a counter-electrode contact, is formed on a substrate of semi-conductor on insulator type. The substrate is covered by a layer of dielectric material and a gate material. The counter-electrode contact is located in the pattern of the gate electrode. The gate material is etched to define the gate electrode, the source contact and drain contacts and the counter-electrode contact. A part of the support substrate is released through the pattern of the counter-electrode contact area. An electrically conductive material is deposited on the free part of the support substrate to form the counter-electrode contact.