The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2013

Filed:

Jan. 25, 2005
Applicants:

Johannes Baur, Regensburg, DE;

Berthold Hahn, Hemau, DE;

Volker Härle, Laaber, DE;

Raimund Oberschmid, Sinzing, DE;

Andreas Weimar, Regensburg, DE;

Inventors:

Johannes Baur, Regensburg, DE;

Berthold Hahn, Hemau, DE;

Volker Härle, Laaber, DE;

Raimund Oberschmid, Sinzing, DE;

Andreas Weimar, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A thin-film LED comprising an active layer () made of a nitride compound semiconductor, which emits electromagnetic radiation () in a main radiation direction (). A current expansion layer () is disposed downstream of the active layer () in the main radiation direction () and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction () is coupled out through a main area (), and a first contact layer () is arranged on the main area (). The transverse conductivity of the current expansion layer () is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer () made of a second nitride compound semiconductor material in the current expansion layer ().


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