The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Feb. 17, 2012
Takahiro Kawashima, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Kenji Harada, Osaka, JP;
Norishige Nanai, Osaka, JP;
Takayuki Takeuchi, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Kenji Harada, Osaka, JP;
Norishige Nanai, Osaka, JP;
Takayuki Takeuchi, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nanowire transistor according to the present invention includes: at least one nanowireincluding a core portionthat functions as a channel region and an insulating shell portionthat covers the surface of the core portion; source and drain electrodesand, which are connected to the nanowire; and a gate electrodefor controlling conductivity in at least a part of the core portionof the nanowire. The core portionis made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portionis made of an insulator including Si and functions as at least a portion of a gate insulating film.