The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Feb. 18, 2009
Issei Satoh, Itami, JP;
Naho Mizuhara, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Takashi Sakurada, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Hideaki Nakahata, Itami, JP;
Issei Satoh, Itami, JP;
Naho Mizuhara, Itami, JP;
Keisuke Tanizaki, Itami, JP;
Michimasa Miyanaga, Osaka, JP;
Takashi Sakurada, Itami, JP;
Yoshiyuki Yamamoto, Itami, JP;
Hideaki Nakahata, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film () contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (), the AlN thin film () is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.