The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Jun. 10, 2008
Applicants:
Arito Ogawa, Toyama, JP;
Kunihiko Iwamoto, Hamanatsu, JP;
Hiroyuki Ota, Tsukuba, JP;
Inventors:
Assignees:
Hitachi Kokusai Electric Inc., Tokyo, JP;
Rohm Co., Ltd., Kyoto-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); B05C 11/00 (2006.01); B05C 13/00 (2006.01); B05C 13/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device manufacturing method includes the steps of forming a silicate film by performing a first step of forming a metal oxide film on a silicon substrate, and a second step of inducing a solid phase reaction between the metal oxide film and a surface of the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.