The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Feb. 14, 2011
Chiharu Sasaki, Tokyo, JP;
Wataru Tamura, Tokyo, JP;
Keita Akiyama, Tokyo, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×10to 4×10cm. The active layer is made of (AlGa)InP (0<x≦1, 0≦y≦1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of GaInP (0≦x<1). If d is the layer thickness of the second clad layer (nm) and Nis the average dopant concentration of the second clad layer (cm), then d≧1.2×N×10+150 is satisfied.