The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 05, 2013

Filed:

Apr. 22, 2009
Applicants:

Yong Qiu, Beijing, CN;

Lian Duan, Beijing, CN;

Yang LI, Beijing, CN;

Guohui Zhang, Beijing, CN;

Inventors:

Yong Qiu, Beijing, CN;

Lian Duan, Beijing, CN;

Yang Li, Beijing, CN;

Guohui Zhang, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/54 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an organic light emitting device and a fabrication method thereof, comprising a substrate, an anode layer formed on said substrate, an organic function layer formed on said anode layer, and a cathode layer formed on said organic function layer, characterized in that, further comprising a cathode interface modification layer between said organic function layer and said cathode layer, wherein said cathode interface modification layer contains a compound ABC, A is an element of Group IA or IIA, B is an element of Group IIIA or VA, C is a hydrogen element, and 1≦x≦2, yε[0,1], 1≦z≦4. In the present invention, the cathode interface modification layer is formed after forming a light emitting layer, the cathode interface modification layer contains a compound ABC, the electron injection ability at the cathode interface can be improved by adding the cathode interface modification layer, and hence the device performance can be significantly improved. At the same time, the process feasibility of the material is good during the fabrication, and thus the yield of the device can be further improved.


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